Hynix, Toshiba to develop new memory device
SEOUL – South Korea’s Hynix Semiconductor and Japanese electronics giant Toshiba said Wednesday they have agreed to jointly develop a next-generation memory device. The companies said in a statement that the tie-up to develop spin-transfer torque magneto-resistance random access memory (STT-MRAM) technology — for use in devices such as smartphones — would help them minimise [...]
